SMUN5211DW1T1G
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fabrikant:
ONSEMI
Categorie:
Halfgeleider IC
Specificaties
Categorie:
Discrete halfgeleiderproducten
Transistors
Bipolair (BJT)
Bipolaire transistorarrays, voorgevoelig
Stroom - collector (Ic) (max):
100 mA
Productstatus:
Actief
Type transistor:
2 NPN - Voorspelbaar (Dual)
Frequentie - Overgang:
-
Montage-type:
Oppervlakte
Pakket:
Tape & Reel (TR)
Snijdband (CT)
Digi-Reel®
Reeks:
Automobilerij, AEC-Q101
Vce verzadiging (max) @ Ib, Ic:
250 mV @ 300 μA, 10 mA
Spanning - Verdeling van de collectoremitter (max):
50 V
Verpakking van de leverancier:
Sc-88/sc70-6/sot-363
Resistor - basis (R1):
10kOhm
Mfr:
ONSEMI
Resistor - basis van de zender (R2):
10kOhm
Stroom - collectievergrens (maximaal):
500nA
Vermogen - Max.:
187mW
Pakket / doos:
6-TSSOP, SC-88, SOT-363
Gelijkstroomwinst (hFE) (min) @ Ic, Vce:
35 @ 5mA, 10V
Basisproductnummer:
SMUN5211
Inleiding
Bipolaire transistor (BJT) 2 NPN - Biolaire transistor (Dual) 50V 100mA 187mW Oppervlakte SC-88/SC70-6/SOT-363
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| Beeld | deel # | Beschrijving | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET halfgeleider IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
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