NTD20P06LT4G
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fabrikant:
ONSEMI
Beschrijving:
MOSFET P-CH 60V 15.5A DPAK
Categorie:
Halfgeleider IC
Specificaties
Categorie:
Discrete halfgeleiderproducten
Transistors
FET's, MOSFET's
Eénvoudige FET's, MOSFET's
FET Eigenschap:
-
Vgs(th) (Max) @ Id:
2V @ 250μA
Werktemperatuur:
-55°C ~ 175°C (TJ)
Pakket / doos:
TO-252-3, DPak (2 Leads + Tab), SC-63
Doorgangsplicht (Qg) (Max) @ Vgs:
26 nC @ 5 V
Rds On (Max) @ Id, Vgs:
150 mOhm @ 7,5 A, 5 V
FET-type:
P-Channel
Inrichtingsspanning (Max Rds On, Min Rds On):
5V
Pakket:
Tape & Reel (TR)
Snijdband (CT)
Digi-Reel®
Drain naar bronspanning (Vdss):
60 V
Vgs (max):
±20V
Productstatus:
Actief
Invoercapaciteit (Ciss) (Max) @ Vds:
1190 pF @ 25 V
Montage-type:
Oppervlakte
Reeks:
-
Verpakking van de leverancier:
DPAK
Mfr:
ONSEMI
Stroom - continue afvoer (Id) @ 25°C:
15.5A (Ta)
(Maximum) machtsdissipatie:
65 W (Tc)
technologie:
MOSFET (Metaaloxide)
Basisproductnummer:
NT1 deeltjes
Inleiding
P-kanaal 60 V 15,5 A (Ta) 65 W (Tc) DPAK
Verwante producten
High Speed Dual Inverting MOSFET halfgeleider IC Gate Driver Chip 1.5A MC34151DR2G
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
MC33178DR2G
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CAT24C08WI-GT3
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FDC3601N
MOSFET 2N-CH 100V 1A SSOT-6
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MOSFET N/P-CH 40V 8-SOIC
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MOSFET 2N-CH 20V 9.4A 8SOIC
FDC6401N
MOSFET 2N-CH 20V 3A SSOT-6
| Beeld | deel # | Beschrijving | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET halfgeleider IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
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