Fqt1n60ctf-WS
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fabrikant:
ONSEMI
Beschrijving:
MOSFET N-CH 600V 200MA SOT223-4
Categorie:
Halfgeleider IC
Specificaties
Categorie:
Discrete halfgeleiderproducten
Transistors
FET's, MOSFET's
Eénvoudige FET's, MOSFET's
FET Eigenschap:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Werktemperatuur:
-55 °C ~ 150 °C (TJ)
Pakket / doos:
TO-261-4, TO-261AA
Doorgangsplicht (Qg) (Max) @ Vgs:
6.2 nC @ 10 V
Rds On (Max) @ Id, Vgs:
11.5 Ohm @ 100mA, 10V
FET-type:
N-kanaal
Inrichtingsspanning (Max Rds On, Min Rds On):
10V
Pakket:
Tape & Reel (TR)
Snijdband (CT)
Digi-Reel®
Drain naar bronspanning (Vdss):
600 V
Vgs (max):
±30V
Productstatus:
Actief
Invoercapaciteit (Ciss) (Max) @ Vds:
170 pF @ 25 V
Montage-type:
Oppervlakte
Reeks:
QFET®
Verpakking van de leverancier:
Dronkaard-223-4
Mfr:
ONSEMI
Stroom - continue afvoer (Id) @ 25°C:
200 mA (Tc)
(Maximum) machtsdissipatie:
2.1W (Tc)
technologie:
MOSFET (Metaaloxide)
Basisproductnummer:
FQT1N60
Inleiding
N-kanaal 600 V 200mA (Tc) 2.1W (Tc) Oppervlakte-montage SOT-223-4
Verwante producten
High Speed Dual Inverting MOSFET halfgeleider IC Gate Driver Chip 1.5A MC34151DR2G
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MC33178DR2G
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| Beeld | deel # | Beschrijving | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET halfgeleider IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
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