NTBG080N120SC1
fabrikant:
ONSEMI
Beschrijving:
SICFET N-CH 1200V 30A D2PAK-7
Categorie:
Halfgeleider IC
Specificaties
Categorie:
Discrete halfgeleiderproducten
Transistors
FET's, MOSFET's
Eénvoudige FET's, MOSFET's
FET Eigenschap:
-
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Werktemperatuur:
-55°C ~ 175°C (TJ)
Pakket / doos:
Aan-263-8, D ² Pak (7 Lood + Lusje), aan-263CA
Doorgangsplicht (Qg) (Max) @ Vgs:
56 nC @ 20 V
Rds On (Max) @ Id, Vgs:
110 mOhm @ 20A, 20V
FET-type:
N-kanaal
Inrichtingsspanning (Max Rds On, Min Rds On):
20V
Pakket:
Tape & Reel (TR)
Snijdband (CT)
Digi-Reel®
Drain naar bronspanning (Vdss):
1200 V
Vgs (max):
+25, -15V
Productstatus:
Actief
Invoercapaciteit (Ciss) (Max) @ Vds:
1154 pF @ 800 V
Montage-type:
Oppervlakte
Reeks:
-
Verpakking van de leverancier:
D2pak-7
Mfr:
ONSEMI
Stroom - continue afvoer (Id) @ 25°C:
30A (Tc)
(Maximum) machtsdissipatie:
179W (Tc)
technologie:
SiCFET (Siliciumcarbide)
Basisproductnummer:
NTBG080
Inleiding
N-kanaal 1200 V 30A (Tc) 179W (Tc) Oppervlakte D2PAK-7
Verwante producten
High Speed Dual Inverting MOSFET halfgeleider IC Gate Driver Chip 1.5A MC34151DR2G
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MC33178DR2G
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| Beeld | deel # | Beschrijving | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET halfgeleider IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
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