2sk3557-6-tb-e
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fabrikant:
ONSEMI
Beschrijving:
RF MOSFET N-CH JFET 5V 3CP
Categorie:
Halfgeleider IC
Specificaties
Categorie:
Discrete halfgeleiderproducten
Transistors
FET's, MOSFET's
RF-FET's, MOSFET's
Productstatus:
Actief
Montage-type:
Oppervlakte
Spanning - Nominale:
15 V
Pakket:
Tape & Reel (TR)
Snijdband (CT)
Digi-Reel®
Configuratie:
N-kanaal
Reeks:
-
Ruiscijfer:
1 dB
Verpakking van de leverancier:
3-CP
Voltage - Test:
5 V
Mfr:
ONSEMI
Frequentie:
-
Gewin:
-
Pakket / doos:
TO-236-3, SC-59, SOT-23-3
Huidig - Test:
1 mA
Vermogen - Uitgang:
200mw
technologie:
JFET
Stroom (ampere):
50 mA
Basisproductnummer:
2SK3557
Inleiding
RF Mosfet 5 V 1 mA 200 mW 3-CP
Verwante producten
High Speed Dual Inverting MOSFET halfgeleider IC Gate Driver Chip 1.5A MC34151DR2G
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
MC33178DR2G
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
LM2904DMR2G
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
NCV0372BDWR2G
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
NCV2903DMR2G
IC COMP DUAL OFFSET LV 8MICRO
CAT24C08WI-GT3
EEPROM 8K-Bit I2C Serial EEPROM
FDC3601N
MOSFET 2N-CH 100V 1A SSOT-6
FDS4897C
MOSFET N/P-CH 40V 8-SOIC
FDS6898A
MOSFET 2N-CH 20V 9.4A 8SOIC
FDC6401N
MOSFET 2N-CH 20V 3A SSOT-6
| Beeld | deel # | Beschrijving | |
|---|---|---|---|
|
|
High Speed Dual Inverting MOSFET halfgeleider IC Gate Driver Chip 1.5A MC34151DR2G |
Gate Drivers 1.5A High Speed Dual Inverting MOSFET
|
|
|
|
MC33178DR2G |
Operational Amplifiers - Op Amps 2-18V Dual Low Power Industrial Temp
|
|
|
|
LM2904DMR2G |
Operational Amplifiers - Op Amps 3-26V Dual Lo PWR -40 to 105deg C
|
|
|
|
NCV0372BDWR2G |
Operational Amplifiers - Op Amps ANA DUAL PWR OP AMP
|
|
|
|
NCV2903DMR2G |
IC COMP DUAL OFFSET LV 8MICRO
|
|
|
|
CAT24C08WI-GT3 |
EEPROM 8K-Bit I2C Serial EEPROM
|
|
|
|
FDC3601N |
MOSFET 2N-CH 100V 1A SSOT-6
|
|
|
|
FDS4897C |
MOSFET N/P-CH 40V 8-SOIC
|
|
|
|
FDS6898A |
MOSFET 2N-CH 20V 9.4A 8SOIC
|
|
|
|
FDC6401N |
MOSFET 2N-CH 20V 3A SSOT-6
|
Verzend RFQ
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MOQ:
